Ultra-high sensitivity
Achieving up to 1,000× lower dark current than prior generations for unparalleled precision and energy efficiency.
Technology · GeSi Photonics
Redefining the Future of Integrated Photonics
Artilux advances GeSi photonics into scalable, CMOS‑compatible platforms that seamlessly bridge optical and electronic domains for next‑generation connectivity and computing. Engineered for high bandwidth, low latency, and energy‑efficient operation, GeSi photonics integrates detection, modulation, and system‑level functionality in a unified photonic ecosystem.
BACKGROUND
Turning germanium’s legacy into the photonic frontier
Artilux transforms germanium’s historic role as the first semiconductor into a modern breakthrough — a GeSi photonic platform that removes silicon’s fundamental optical bottleneck. Silicon’s poor light absorption, weak electro‑optical interaction, and reliance on costly III–V materials long limited high‑speed, high‑sensitivity photonics. By merging germanium’s strong photonic response with silicon’s CMOS scalability through heterogeneous integration, nanoscale field control, and wafer‑level co‑design, Artilux delivers high sensitivity, low dark current, broad‑spectrum performance, and true mass manufacturability. This unified electronic‑photonic fabric replaces silicon‑limited photonics with faster links, lower power, and next‑generation intelligent systems.
GeSi platform
Uniting the spectrum of innovation — the power of GeSi photonics
At the core of Artilux’s technology lies its proprietary germanium silicon (GeSi) photonic platform, engineered to overcome the inherent trade-offs of conventional silicon and III–V materials. By embedding germanium into standard silicon CMOS processes, Artilux enables large-scale, high-speed, and ultra-sensitive, down to single photon level, detection and modulation across a broad optical spectrum.
This platform forms the technological foundation for next-generation biosensing, high-density optical interconnect fabrics, and photonic computing — extending the reach of light into every layer of intelligent systems.
Key Advantages
Broad spectral coverage
Operating from visible to NIR and SWIR, enabling advanced sensing, imaging, and communication applications.
High bandwidth and low latency
Tailored for AI, cloud, and edge computing workloads that demand both speed and efficiency.
CMOS-ready scalability
Fully compatible with high-volume foundry production, ensuring cost efficiency and commercial viability.
DEVICE INNOVATIONS
GeSi powering for the next frontier of AI photonics
Photodetector (PD)
Halcyon™
A new benchmark in CMOS-compatible photonics. Halcyon™ achieves over 1,000× reduction in dark current, combining ultra-low noise, broad-spectrum sensitivity, and mass production scalability.
Learn more about Halcyon™ →Avalanche Photodetector (APD)
Phoenix™
Designed for extreme sensitivity and low noise, Phoenix™ reduces both primary and avalanche dark currents by orders of magnitude beyond conventional materials. Fully CMOS-compatible, it combines high gain, low noise, and broad-spectrum operation — ideal for next-generation optical interconnects, SWIR sensing, and imaging systems.
Learn more about Phoenix™ →Single-Photon Avalanche Diode (SPAD)
Nova™
The Artilux GeSi SPAD brings broadband single-photon detection to room temperature, achieving ultra-low dark count rates and high photon detection efficiency (PDE) in a compact array form factor.
Learn more about Nova™ →Planar Metasurface Optics
Metalens™
The Artilux Metalens technology reimagines light control at the chip scale. Through subwavelength metasurface engineering, it provides broadband focusing, beam shaping, and aberration-free imaging — all within an ultra-thin, CMOS-compatible structure. Seamlessly integrated with Artilux’s GeSi platform, it enables compact, low-power optical systems for biosensing, spectral imaging, and optical interconnect and photonic computing.
Learn more about Metalens™ →Electro-Absorption Modulator (EAM)
Flash™
Ultra high bandwidth, low insertion loss with improved temperature stability, small for print, operated in the O-band.
Artilux’s Ge EAM delivers ultra-high bandwidth, low insertion loss, and enhanced temperature stability within an ultra-compact footprint, operating efficiently in the O-band. Built upon the GeSi photonic platform, it combines the speed and modulation depth of germanium with the scalability of silicon CMOS. This breakthrough aims to enable energy-efficient, high-speed optical links for next-generation AI data centers, chiplet interconnects, and advanced computing architectures — redefining the limits of performance and integration in optical communication.
Learn more about Flash™ →PD/APD Arrays
Matrix™
High responsivity, large channel-count, and wide‑bandwidth optical detection in visible, NIR, and SWIR wavelengths, engineered for scalable optical interconnects on the GeSi photonic platform.
Artilux’s Matrix™ PD/APD arrays leverage GeSi photonic integration to deliver high sensitivity, low dark current, large channel-count, and fast optical response within an ultra‑compact, CMOS‑compatible architecture. By combining the intrinsic absorption efficiency of germanium with silicon’s manufacturability, Matrix™ supports energy‑efficient, high‑bandwidth optical detection for AI data centers, chiplet‑based systems, and next‑generation computing architectures — enhancing system‑level performance, scalability, and reliability in modern optical communication.
Learn more about Matrix™ →Get in touch
Unified by the
Artilux GeSi platform
Powered by our GeSi photonic foundation, Artilux merges physics and semiconductor engineering to turn light into scalable intelligence.